TSM60N600CH C5G

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Overview of TSM60N600CH C5G

Part NumberTSM60N600CH C5G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CHANNEL 600V 8A TO251
DatasheetsDownload TSM60N600CH C5G Datasheet PDFPDF Icon
Price for TSM60N600CH C5G

Specification of TSM60N600CH C5G

Status
Not For New Designs
Package
Tube
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
743 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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